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| AP4435GM RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Characteristic SO-8 S S D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S G -30V 20m -9A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 30 + 20 -9 -7.3 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit /W Data and specifications subject to change without notice 1 200811216 AP4435GM Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 o Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-7A VGS=-4.5V, ID=-5A Min. -30 -1 - Typ. 16 18 3 10 8 6.6 44 34 195 190 Max. Units 20 32 -3 -1 -25 +100 29 V m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-30V, VGS=0V VGS=+20V ID=-7A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1175 1690 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-2.1A, VGS=0V IS=-7A, VGS=0V, dI/dt=100A/s Min. - Typ. 28 18 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 2 AP4435GM 50 50 T A =25 C 40 o -ID , Drain Current (A) 30 -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V V G = -3.0V T A =150 C 40 o -10V -7.0V -5.0V -4.5V 30 V G = -3.0V 20 20 10 10 0 0 1 2 3 4 0 0 2 4 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 32 1.6 I D = -5A 28 T A =25 o C Normalized RDS(ON) 1.4 I D = -7A V G = -10V RDS(ON) (m) 24 1.2 20 1.0 16 0.8 12 2 4 6 8 10 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 10 1.8 8 -IS(A) 6 -VGS(th) (V) 1.3 T j =150 o C T j =25 o C 1.6 1.4 4 1.2 2 1 0 0.1 0.3 0.5 0.7 0.9 1.1 0.8 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4435GM f=1.0MHz 12 10000 -VGS , Gate to Source Voltage (V) 10 8 I D = -7A V DS = -24V C (pF) 6 1000 C iss 4 2 C oss C rss 100 0 10 20 30 40 1 5 9 13 17 21 25 29 0 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100.00 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10.00 100us 1ms -ID (A) 1.00 0.2 10ms 100ms 1s T A =25 C Single Pulse 0.01 0.01 0.1 1 10 100 0.1 0.1 0.05 PDM t 0.02 0.01 Single Pulse 0.10 T o DC Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 125/W 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 V DS = -5V T j =25 o C T j =150 o C VG QG -4.5V QGS QGD 30 -ID , Drain Current (A) 20 10 Charge 0 Q 0 1 2 3 4 5 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters SYMBOLS MIN NOM MAX 8 7 6 5 E1 E A A1 B c D E E1 e 1.35 0.10 0.33 0.19 4.80 5.80 3.80 1.55 0.18 0.41 0.22 4.90 6.15 3.90 1.27 TYP 0.254 TYP 1.75 0.25 0.51 0.25 5.00 6.50 4.00 1 2 3 4 e B G L 0.38 0.00 4.00 0.90 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 4435GM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 |
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